User Highlights 2024

Quantifying interfacial energetics of 2D semiconductor electrodes using in situ spectroelectrochemistry and many-body theory
Quantifying interfacial energetics of 2D semiconductor electrodes using in situ spectroelectrochemistry and many-body theory
2024 User Research Highlights
2D semiconductors such as MoS2 are attractive materials for solar energy conversion because their small…
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Layer-by-layer disentanglement of Bloch states
Layer-by-layer disentanglement of Bloch states
2024 User Research Highlights
MnBi2Te4 as well as the related heterostructure compounds (MnBi2Te4)(Bi2Te3)n have recently attracted…
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Anomalous Landau quantization in intrinsic magnetic topological insulators
Anomalous Landau quantization in intrinsic magnetic topological insulators
2024 User Research Highlights
The MnBi2Te4 (MBT) family of intrinsic magnetic topological insulators (MTI) has emerged as an important…
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Modulation Effect of Substrate Interactions on Nucleation and Growth of MoS2 on Silica
Modulation Effect of Substrate Interactions on Nucleation and Growth of MoS2 on Silica
2024 User Research Highlights
Surface nanopatterning of substrate by ion beam irradiation provides precise control over the nucleation…
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Stabilizing far-from-equilibrium (Mo,Ti)S2 thin films by metal sulfurization at reduced temperature
Stabilizing far-from-equilibrium (Mo,Ti)S2 thin films by metal sulfurization at reduced temperature
2024 User Research Highlights
Alloying different transition metal dichalcogenides not only offers the opportunities to fine-tune their…
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Self-limiting stoichiometry in SnSe thin films
Self-limiting stoichiometry in SnSe thin films
2024 User Research Highlights
The synthesis of high-quality SnSe is plagued with difficulties in controlling the film thickness to the…
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In-House Highlights 2024

Towards a mechanistic understanding of the formation of 2D-GaNx via MOCVD
Towards a mechanistic understanding of the formation of 2D-GaNx via MOCVD
2024 In-House Research Highlights

Epitaxial graphene (EG) plays a crucial role in the confinement and stabilization of 2D group III…

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Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
2024 In-House Research Highlights

Epitaxial growth of 2D transition metal dichalcogenides (TMDs) on sapphire has emerged as a promising…

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Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers
Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers
2024 In-House Research Highlights

Transition metal dichalcogenide (TMD)/graphene vertical heterostructures are attractive for…

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Growth of Nanometer-Thick –InSe by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
Growth of Nanometer-Thick –InSe by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
2024 In-House Research Highlights

2D InSe is known as a moderate bandgap semiconductor with direct to indirect bandgap crossover…

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Broad Impact Highlights 2024