Tunneling Effects In Crossed Ta2Pt3Se8−Ta2Pd3Se8 Nanowire Junctions: Implications For Anisotropic Photodetectors

What Has Been Achieved:

This work successfully fabricated nano-scale crossed junctions composed of two vdW nanowires: p-type Ta2Pt3Se8 (TPtS) and n-type Ta2Pd3Se8 (TPdS) and revealed its unique electronic and optoelectronic properties.

Importance of the Achievement:

This work not only reveals a route to build a nanoscale crossed junction between two quasi-1D vdW materials, but also shed light on the electrical transport and photocurrent generation mechanisms for the nanoscale crossed junctions.

Unique Feature(s) of the MIP that Enabled this Achievement:

The 2DCC has a unique capacity of growing crystals with desired quality and property. The high-quality Ta2Pd3Se8 and n-type Ta2Pt3Se8  single crystals used in this project were synthesized using the chemical vapor transport method through fine-tuning of the temperature gradient, the transport agent and vapor pressure.

Publication:

Tianjiao Wang, Yanglin Zhu, Zhiqiang Mao, and Ya-Qiong Xu, Tunneling Effects in Crossed Ta2Pt3Se8–Ta2Pd3Se8 Nanowire Junctions: Implications for Anisotropic Photodetectors, ACS Appl. Nano Mater. 4, 1817 (2021) DOI:  https://doi.org/10.1021/acsanm.0c03223

This work was supported by the National Science Foundation (Grants ECCS-1810088 and CBET-1805924) and Vanderbilt
Discovery Grant. Financial support for sample preparation was provided by the National Science Foundation through the
Penn State 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP) under NSF Cooperative Agreement DMR-1539916.