Orientation Domain Dispersions In Wafer Scale Epitaxial Monolayer WSe2 On Sapphire

What Has Been Achieved:

Characterization of orientation and domain dispersions in wafer-scale epitaxial WSe2 monolayers using azimuthal reflection high-energy electron diffraction (ARHEED).

Importance of the Achievement:

ARHEED is demonstrated as a powerful technique to measure the symmetry, lattice constant and in-plane orientation domain dispersion in ultra-thin epitaxial TMD layers grown on sapphire.

Unique Feature(s) of the MIP that Enabled this Achievement:

Wafer-scale WSe2 monolayers grown on c-plane sapphire by MOCVD in the 2DCC Thin Films facility.

Publication:

X. Chen, B. Huet, T.H. Choudhury, J.M. Redwing, T.M. Lu and G.C. Wang, “Orientation domain dispersions in wafer scale epitaxial monolayer WSe2 on sapphire,” App. Surf. Sci. 2021, 567, 150798.

This work is supported by the New York State’s Empire State Development’s Division of Science, Technology and Innovation (NYSTAR) through Focus Center Contract C150117, Rensselaer, and the Penn State 2D Crystal Consortium - Materials Innovation Platform under National Science Foundation cooperative agreement DMR-1539916.