Controllable P-Type Doping Of 2D WSe2 Via Vanadium Substitution

What Has Been Achieved:

Wafer-scale substitutional p-type doping of WSe2 films with vanadium atoms at FEOL and BEOL compatible temperatures which is the first report has ever been demonstrated in the community.

Importance of the Achievement:

Extrinsic 2D semiconductors will be a backbone of the next generation logic devices where controlled introduction of impurity atoms into a host lattice will be a major driving force towards industrialization.

Unique Feature(s) of the MIP that Enabled this Achievement:

2DCC-MIP’s synthesis and theory capabilities that enabled an extensive study of vanadium dopants in the WSe2 lattice.

Publication:

Kozhakhmetov, A., Stolz, S., Tan, A. M. Z., Pendurthi, R., Bachu, S., Turker, F., Alem, N., Kachian, J., Das, S., Hennig, R. G., Gröning, O., Schuler, B., Robinson, J. A., Controllable p-Type Doping of 2D WSe2 via Vanadium Substitution. Adv. Funct. Mater. 2021, 2105252. https://doi.org/10.1002/adfm.202105252

A.K. and J.A.R. acknowledge Intel through the Semiconductor Research Corporation (SRC) Task 2746, the Penn State 2D Crystal Consortium (2DCC)-Materials Innovation Platform (2DCC-MIP) under NSF cooperative agreement DMR- 1539916, and NSF CAREER Award 1453924 for financial support. S.S. acknowledges funding from the Swiss National Science Foundation under SNSF project number 159690. A.M.Z.T. and R.G.H. were also funded by the NSF through the 2DCC-MIP under award DMR-1539916, and by additional awards DMR-1748464 and OAC-1740251. Computational resources were provided by the University of Florida Research Computing Center. The work of R.P. and S.D was supported by Army Research Office (ARO) through Contract Number W911NF1920338. S.B. and N.A. also acknowledge additional support provided by NSF CAREER DMR-1654107 and Materials Characterization Lab at Penn State.