User Highlights 2024

Three-dimensional integration of two-dimensional field-effect transistors
Three-dimensional integration of two-dimensional field-effect transistors
2024 User Research Highlights
With the escalating costs of developing and manufacturing integrated circuit (IC) chips, methods to…
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Wafer-scale transition metal dichalcogenides enable large area 2D electronics and optoelectronics
Wafer-scale transition metal dichalcogenides enable large area 2D electronics and optoelectronics
2024 User Research Highlights
Ultra-thin 2D semiconductors based on monolayer transition metal dichalcogenides (TMDs) are seen as…
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Efficient thermally generation of a spin current in a topological insulator
Efficient thermally generation of a spin current in a topological insulator
2024 User Research Highlights
The canonical topological insulator Bi2Se3 has played a central role in the development of ‘topological…
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Low-Frequency Raman Study of Large-Area Twisted Bilayers of 𝐖𝐒_𝟐 Stacked by an Etchant-Free Transfer Method
Low-Frequency Raman Study of Large-Area Twisted Bilayers of WS_2 Stacked by an Etchant-Free Transfer Method
2024 User Research Highlights
Transition metal dichalcogenides have strong intra-covalent bonding. When stacked in multilayers, weak…
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Nonvolatile Memristive Effect in Few Layer CrI3 Driven by Electrostatic Gating
Nonvolatile Memristive Effect in Few Layer CrI3 Driven by Electrostatic Gating
2024 User Research Highlights
The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing…
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Scalable CMOS back-end-of-line-compatible AlScN/2D channel ferroelectric field-effect transistors
Scalable CMOS back-end-of-line-compatible AlScN/2D channel ferroelectric field-effect transistors
2024 User Research Highlights
3D monolithic integration of memory devices with logic transistors is essential for augmenting…
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