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In-House Research Highlights

Towards a mechanistic understanding of the formation of 2D-GaNx via MOCVD
Towards a mechanistic understanding of the formation of 2D-GaNx via MOCVD
2024 In-House Research Highlights

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Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
2024 In-House Research Highlights

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Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers
Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers
2024 In-House Research Highlights

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Growth of Nanometer-Thick –InSe by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
Growth of Nanometer-Thick –InSe by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
2024 In-House Research Highlights

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  • 2024 Highlights
    • User Research Highlights 2024
    • In-House Research Highlights 2024
      • Atomic structures and interfacial engineering of ultrathin indium intercalated between graphene and a SiC substrate
      • Emergent interfacial superconductivity at the interface of topology and magnetism
      • Evidence of magnetic fluctuation induced Weyl semimetal state in the antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4
      • Growth of Nanometer-Thick –InSe by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
      • Illuminating mechanisms of epitaxy of 2D van der Waals crystals via synthesis, characterization and theory/simulation
      • MgSiP2: An Infrared Nonlinear Optical Crystal with a Large Non-Resonant Phase-Matchable Second Harmonic Coefficient and High Laser Damage Threshold
      • Possible evidence of Weyl fermion enhanced thermal conductivity under magnetic fields in the antiferromagnetic topological insulator Mn(Bi1−xSbx)2Te4
      • Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers
      • Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
      • Towards a mechanistic understanding of the formation of 2D-GaNx via MOCVD
    • Broader Impact Highlights 2024
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