In-House Highlights 2024

Towards a mechanistic understanding of the formation of 2D-GaNx via MOCVD
Towards a mechanistic understanding of the formation of 2D-GaNx via MOCVD
2024 In-House Research Highlights

Epitaxial graphene (EG) plays a crucial role in the confinement and stabilization of 2D group III…

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Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
2024 In-House Research Highlights

Epitaxial growth of 2D transition metal dichalcogenides (TMDs) on sapphire has emerged as a promising…

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Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers
Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers
2024 In-House Research Highlights

Transition metal dichalcogenide (TMD)/graphene vertical heterostructures are attractive for…

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Growth of Nanometer-Thick –InSe by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
Growth of Nanometer-Thick –InSe by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
2024 In-House Research Highlights

2D InSe is known as a moderate bandgap semiconductor with direct to indirect bandgap crossover…

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