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What Has Been Achieved: Epitaxial WS2 monolayers on 2” diameter sapphire that exhibit a unidirectional alignment of domains resulting in coalesced films that are largely free of inversion domain boundaries.
What Has Been Achieved:
We have developed the first “roadmap” to synthesizing 2D materials beyond graphene for the scientific and industrial communities.
Importance of Achievement:
The Roadmap provides a path forward for addressing the many intricacies for creating electronic-grade 2D materials for next generation technologies.
Unique Features of the MIP That Enabled Project:
Provided the foundation for interdisciplinary interactions.
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What Has Been Achieved:
We have demonstrated scalable crystal growth of PtSe2 on atomically smooth Al2O3 with molecular beam epitaxy
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What Has Been Achieved:
We demonstrate large-area, environmentally stable, single-crystal 2D gallium, indium and tin that are stabilized at the interface of epitaxial graphene and silicon carbide. The 2D metals are covalently
bonded to SiC below but present a non-bonded interface to the graphene overlayer; that is, they are ‘half van der Waals’ metals with strong internal gradients in bonding character.
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What Has Been Achieved:
We have demonstrated that a ferromagnetic (FM) phase in Mn(Bi,Sb)2Te4 can be stabilized through controlling defects.
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What Has Been Achieved:
We have demonstrated scalable rhenium doping of front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible WSe2 films with precisely controlled doping concentration down to 0.0001% on c-plane sapphire and SiO2/Si substrates.
Importance of the Achievement:
What Has Been Achieved:
Identification of a new growth method assisted by substrate defects that allows achieves record orientational uniformity in 2D chalcogenides.
Importance of Achievement:
The consequent suppression of inversion domain boundaries allows the synthesis of near-single-crystalline domains with improved transport properties.
Unique Features of the MIP That Enabled Project:
What has Been Achieved:
A new way to control the precise folding geometry of 2D sheets has been conceived and validated by a combination of first principles and empirical modeling.
Importance of Achievement:
It is challenging to precisely control fold geometry at the nanoscale. Such folds enable the production of new 3D structures from 2D sheets, with potential for new functionalities. This work shows how a very straightforward and familiar process – doping – can control the geometry of folds.
What Has Been Achieved:
A new highly efficient method to calculate resonant Raman intensities including excitonic effects.
Importance of Achievement:
This new method allows us to better interpret and utilize high-throughput optical characterization of 2D materials, including potential roles of defects and heterostructures. This could be enabling of data-intensive modes of analysis and allows us to access new routes towards understanding electron-phonon interactions.
What Has Been Achieved:
A multi-step process was developed to achieve large scale epitaxial growth of atomically-thin WSe2 layers on sapphire by gas source chemical vapor deposition.
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