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Controllable P-Type Doping Of 2D WSe2 Via Vanadium Substitution

2021 In-House Research Highlights

What Has Been Achieved:

Wafer-scale substitutional p-type doping of WSe2 films with vanadium atoms at FEOL and BEOL compatible temperatures which is the first report has ever been demonstrated in the community.

Importance of the Achievement:

Extrinsic 2D semiconductors will be a backbone of the next generation logic devices where controlled introduction of impurity atoms into a host lattice will be a major driving force towards industrialization.

Unique Feature(s) of the MIP that Enabled this Achievement:

Atomistic-Scale Simulations On Graphene Bending Near A Copper Surface

2021 In-House Research Highlights

What Has Been Achieved:

We demonstrated the relevance of using a  recently developed ReaxFF parameter sets for graphene properties as well as determined the the binding energy for flat and bent graphene with hydrogen and copper atoms. Moreover, the draping angle at copper step edges obtained from our atomistic simulations was shown to be comparable to the experimentally measured draping angle, validating the ReaxFF results.

Importance of the Achievement:

A Roadmap For Electronic Grade 2D Materials

2019 In-House Research Highlights

What Has Been Achieved:

We have developed the first “roadmap” to synthesizing 2D materials beyond graphene for the scientific and industrial communities.

Importance of Achievement:

The Roadmap provides a path forward for addressing the many intricacies for creating electronic-grade 2D materials for next generation technologies.

Unique Features of the MIP That Enabled Project:

Provided the foundation for interdisciplinary interactions.

Publication:

Atomically Thin Half Van Der Waals Materials Via Confinement Heteroepitaxy

2020 In-House Research Highlights

What Has Been Achieved:

We demonstrate large-area, environmentally stable, single-crystal 2D gallium, indium and tin that are stabilized at the interface of epitaxial graphene and silicon carbide. The 2D metals are covalently

bonded to SiC below but present a non-bonded interface to the graphene overlayer; that is, they are ‘half van der Waals’ metals with strong internal gradients in bonding character.

Importance of Achievement: