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What Has Been Achieved:
A process to produce wafer-scale single-layer amorphous MoO3 was developed by UV-ozone oxidation of a MoS2 monolayer. The ultrathin MoO3 was used an active device layer to demonstrate the thinnest oxide-based nonvolatile resistive switching device that exhibits low voltage operation and high ON/OFF ratio.
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What Has Been Achieved:
Demonstrate ultrafast optical melting of trimer superstructure in layered 1T′-TaTe2.
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What Has Been Achieved:
This work successfully fabricated nano-scale crossed junctions composed of two vdW nanowires: p-type Ta2Pt3Se8 (TPtS) and n-type Ta2Pd3Se8 (TPdS) and revealed its unique electronic and optoelectronic properties.
Importance of the Achievement:
This work not only reveals a route to build a nanoscale crossed junction between two quasi-1D vdW materials, but also shed light on the electrical transport and photocurrent generation mechanisms for the nanoscale crossed junctions.
What Has Been Achieved:
The experiment provides evidence for a topological Hall effect created by skyrmions and the Dzyaloshinskii–Moriya interaction at the interface between a topological insulator (Bi2Se3) and an insulating ferromagnet (BaFe12O19).
What Has Been Achieved:
Deconvoluting the impact of processing on remote epitaxy of 3D materials using graphene as the interface layer.
Importance of the Achievement:
This work provides the first understanding and impact of graphene layer transfer and 2D/3D interface properties on remote epitaxy. It provides an important how-to guide for researchers interested in remote epitaxy regarding the importance of the graphene layer and how it is prepared.
What Has Been Achieved:
Succeeded in providing the origins of electronic bands in the antiferromagnetic topological insulator MnBi2Te4.
Importance of the Achievement:
Offer a solid step forward in reconciling the existing controversies in the electronic structure of MnBi2Te4 and provides an important framework to understand the electronic structures of other relevant topological materials MnBi2nTe3n+1.
Unique Feature(s) of the MIP that Enabled this Achievement:
What Has Been Achieved:
Characterization of orientation and domain dispersions in wafer-scale epitaxial WSe2 monolayers using azimuthal reflection high-energy electron diffraction (ARHEED).
Importance of the Achievement:
ARHEED is demonstrated as a powerful technique to measure the symmetry, lattice constant and in-plane orientation domain dispersion in ultra-thin epitaxial TMD layers grown on sapphire.
Unique Feature(s) of the MIP that Enabled this Achievement:
What Has Been Achieved:
Multiscale/multiphysics models that couple continuum fluid mechanics and phase-field methods provide a means to map out how experimentally controllable macroscale (inlet velocity, temperature) and mesoscale (surface diffusion and deposition rates) parameters control the morphology of 2D materials, within the precise experimental growth geometries of the 2DCC, in a manner that can then facilitate the transfer of these techniques to other chambers, in the longer term.
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What Has Been Achieved:
Demonstrate the Van Hove singularity and Lifshitz transition in the nodal-line semimetal ZrSiTe.
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What Has Been Achieved:
Multi-dimensional imaging using scattering scanning nearfield optical microscopy (sSNOM) and Kelvin force microscopy was combined with confocal Raman microscopy and photoluminescence mapping to correlate the electronic properties of MoS2 and MoS2/graphene heterostructures to local variations in doping and strain. The results were used to explain changes in the optical response of the material in the presence of doxorubicin, a common cancer drug.
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