Bandgap Recovery Of Monolayer MoS2 Using Defect Engineering And Chemical Doping
What Has Been Achieved:
Controlled introduction of single and divacancy defects in monolayer MoS2 using a Helium Ion Microscope. This enabled a detailed study correlating defect density with the carrier concentration and optical properties of MoS2. Reduced photoluminescence intensity in defected MoS2 was restored and dramatically enhanced due to adsorption of p-type dopants (FATCNQ) on the MoS2 surface.
Importance of the Achievement:
