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Tunneling Effects in Crossed Ta2Pt3Se8−Ta2Pd3Se8 Nanowire Junctions: Implications for Anisotropic Photodetectors

Tunneling Effects in Crossed Ta2Pt3Se8−Ta2Pd3Se8 Nanowire Junctions: Implications for Anisotropic Photodetectors

Project Summary: Transition metal dichalcogenides (TMDCs) with van der Waals gaps (vdW) have been a subject under extensive studies, since 2D thin layers of these materials exhibit a plethora of technologically useful properties, e.g. large direct band gap and high

Orientation domain dispersions in wafer scale epitaxial monolayer WSe2 on sapphire

Orientation domain dispersions in wafer scale epitaxial monolayer WSe2 on sapphire

Project Summary: Azimuthal reflection high-energy electron diffraction (ARHEED) is demonstrated as a powerful technique to measure the symmetry, lattice constants and in-plane orientation domain dispersion in wafer-scale, continuous monolayer WSe2 epitaxially grown on c-plane sapphire by metalorganic chemical vapor deposition.

NMR determination of Van Hove singularity and Lifshitz transitions in the nodal-line semimetal ZrSiTe

NMR determination of Van Hove singularity and Lifshitz transitions in the nodal-line semimetal ZrSiTe

Project Summary: Nodal-line semimetals represent a new topological quantum state, which has attracted enormous interest. ZrSiTe is a distinct nodal-line semimetal, since it possesses a nodal line protected by nonsymmorphic symmetry very close to the Fermi energy.

Modeling 2D Materials Growth Across Scales: Closing the MGI Loop

Modeling 2D Materials Growth Across Scales: Closing the MGI Loop

What Has Been Achieved: Multiscale/multiphysics models that couple continuum fluid mechanics and phase-field methods provide a means to map out how experimentally controllable macroscale (inlet velocity, temperature) and mesoscale (surface diffusion and deposition rates) parameters control the morphology of 2D materials, within the precise experimental growth geometries of the 2DCC, in a manner tha

Electronic changes in molybdenum dichalcogenides on gold surfaces

Electronic changes in molybdenum dichalcogenides on gold surfaces

Project Summary: The electronic properties of transition metal dichalcogenides (TMDs) vary dramatically depending on their phase (2H vs. 1T) and ans the energy to convert between the two phases is predicted to be relatively low. This has sparked interest in the use of the phase change properties of TMDs for active components in electronic devices.