Two-dimensional oxides open door for high-speed electronics

Student works on 2D material in lab

By Matthew Carroll

UNIVERSITY PARK, Pa. – Advances in computing power over the decades have come thanks in part to our ability to make smaller and smaller transistors, a building block of electronic devices, but we are nearing the limit of the silicon materials typically used. A new technique for creating 2D oxide materials may pave the way for future high-speed electronics, according to an international team of scientists.

New method can scale, simplify manufacture of stretchy semiconductors

Image of a stretchy transistor illuminated from above

By Mariah R. Lucas

UNIVERSITY PARK, Pa. — Soft, elastic semiconductors and circuits could advance wearable medical devices and other emerging technologies, but the high-performance electronics are difficult and expensive to manufacture. A Penn State-led research team plans to make the process easier and cheaper with a new manufacturing method.

They published their approach Nov. 28 in Nature Electronics.

Joan Redwing

Joan Redwing

Director 2DCC-MIP, Synthesis Lead Professor of Materials Science and Engineering and Electrical Engineering

(e) jmr31@psu.edu, (e) redwing@matse.psu.edu
(o) 814-865-8665
N-336 Millennium Science Complex

https://sites.psu.edu/redwing/
Suzanne Mohney

Suzanne Mohney

Professor of Materials Science and Engineering, and Electrical Engineering

(e) sem2@psu.edu, (e) mohney@ems.psu.edu
(o) 814-863-0744
N-209 Millennium Science Complex

Osama Awadelkarim

Osama Awadelkarim

UNESCO Chair Professor and Director of the Center for Nanotechnology Education and Utilization

(e) ooa1@psu.edu, (e) ooaesm@engr.psu.edu
(o) 814-863-1773
309E Earth and Engineering Science