Schematic of the Kurt J. Lesker ALD150LX custer tool.
Atomic layer deposition is a surface controlled self-limiting process, allowing material to grow one atomic layer at a time, a conformal process by nature. Typically, ALD is used for thin film (<100nm) deposition. But it can be used for thick film deposition upto a few micron.
Currently, we owned two thermal ALD systems, and one plasma ALD system. Metal oxides including Al2O3, HfO2, ZnO, TiO2, Ta2O5, etc can be deposited on thermal ALD systems. Excellent quality nitrides (TiN and AlN) and SiO2 can be deposited on plasma ALD system.
Kurt J. Lesker and Cambridge Equipment
Instrument DOI: 10.60551/a8zj-ey54
The ALD150LX Cluster Tool is an integrated system that incorporates a plasma ALD system with a substrate preparation chamber linked by a UHV transfer chamber. This unique combination of chambers and their capabilities enables researchers to create/prepare/modify surfaces prior deposition. In situ ellipsometry and REED enable characterization and control of surfaces as well as interfaces.
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Materials Deposited:
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Substrate size:
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Instrument DOI: 10.60551/6prw-tk56
K.J. Lesker ALD 150LE is a perpendicular flow independent substrate heating thermal ALD system. The unique vacuum and flow dynamics design enables the growth of high quality oxides, excellent for device applications.
Materials Deposited:
- Aluminum Oxide (Al2O3)
- Hafnium Oxide (HfO2)
- Titanium Oxide (TiO2)
- Tantalum Oxide (Ta2O5)
- Zircomium Oxide (ZrO2)
Substrate size:
- 6" wafer
Substrate heating:
- Up to 500°C
The Veeco (Previoulsy Cambridge Nanotech) Savannah 200 is a 200mm (8 inches) ALD system, which is reconfigured to accept large samples up to 12mm tall. The films deposited are good for general use, like capping or protection. The system is open for exotic material development.
Instrument DOI: 10.60551/e5e7-4e64
Materials Deposited:
- Aluminum Oxide (Al2O3)
- Zinc Oxide (ZnO)
- Hafnium Oxide (HfO2)
Substrate size:
- 8" wafer
- 0.5" tall
Substrate heating:
- Up to 400°C