*Coming Soon*
The high pressure thermal evaporation system is designed for synthesizing 2D metals and alloys via confinement heteroexpitaxy (CHet). The substrates, whose size ranges from 5 mm square to 100 mm wafer, can be heated via a graphite heating element up to 1000 ℃ and keep continuous and automatic rotation with a rate from 1 to 30 RPM during the process. A root pump, together with a turbo pump, are employed for chamber evacuation and the base pressure is able to reach below 5×10-7 Torr for dry and clean chamber. Butterfly valve and full-scale capacitance manometer are utilized for closed-loop process pressure control and the operation pressure can reach up to 20 Torr. Three thermal evaporation sources can be mounted in the chamber and be heated separately, allowing synthesis of 2D alloy via CHet. An ion source and a plasma source are integrated into the chamber to generate different types of ions or plasma to generate defects in epitaxial graphene and functionalize graphene. The system also includes N2, Ar, Ar with 5% H2 and O2 gas as processing gas.
- Maximum temperature of substrate: 1000 ℃.
- Continuous and automatic substrate rotation with a rate from 1 to 30 RPM.
- Gas supply: N2, Ar, Ar with 5% H2 and O2.
- Operating pressure: up to 20 Torr (temperature dependent).
- Ultimate vacuum: reach below 5×10-7 Torr for dry and clean chamber.
- Ion source with Ar, Ar with 5% H2 and O2 available.
- Plasma source with N2, and O2 available.
All the 2D metals family via CHet