Speaker: Kunal Mukherjee, Stanford University, Assistant Professor of Materials Science and Engineering
Abstract: The IV-VI semiconductor alloy of PbSe-SnSe spans a 3D-bonded rocksalt structure on the PbSe-rich side and a closely related Van der Waals bonded 2D/layered-orthorhombic structure on the SnSe-side, and has long been studied for its rare electronic, photonic, and thermal properties. With attractively low temperatures for epitaxy below 300 °C, we describe the nucleation and growth of IV-VI materials on GaAs and the formation of extended crystal defects that arise due to integration. We will show the potential of these films as mid-infrared (3-8 µm) light emitters and also highlight how the transition between the 3D- and 2D-bonded structures unfolds in these thin films towards applications in optoelectronics.